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? semiconductor components industries, llc, 2005 december, 2005 ? rev. 7 1 publication order number: mun5211dw1t1/d mun5211dw1t1 series preferred devices dual bias resistor transistors npn silicon surface mount transistors with monolithic bias resistor network the brt (bias resistor t ransistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. these digital transistors are designed to replace a single device and its external resistor bias network. the brt eliminates these individual components by integrating them into a single device. in the mun5211dw1t1 series, two brt devices are housed in the sot?363 package which is ideal for low power surface mount applications where board space is at a premium. features ? simplifies circuit design ? reduces board space ? reduces component count ? pb?free packages are available maximum ratings (t a = 25 c unless otherwise noted, common for q 1 and q 2 ) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 187 (note 1) 256 (note 2) 1.5 (note 1) 2.0 (note 2) mw mw/ c thermal resistance, junction-to-ambient r ja 670 (note 1) 490 (note 2) c/w characteristic (both junctions heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 250 (note 1) 385 (note 2) 2.0 (note 1) 3.0 (note 2) mw mw/ c thermal resistance, junction-to-ambient r ja 493 (note 1) 325 (note 2) c/w thermal resistance, junction-to-lead r jl 188 (note 1) 208 (note 2) c/w junction and storage temperature t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. fr?4 @ minimum pad 2. fr?4 @ 1.0 x 1.0 inch pad preferred devices are recommended choices for future use and best overall value. http://onsemi.com q 1 r 1 r 2 r 2 r 1 q 2 (1) (2) (3) (4) (5) (6) device marking information see specific marking information in the device marking table on page 2 of this data sheet. sot?363 case 419b style 1 1 6 marking diagram xx m 1 6 xx = device code m = date code* = pb?free package (note: microdot may be in either location) *date code orientation and/or position may vary depending upon manufacturing location .
mun5211dw1t1 series http://onsemi.com 2 device marking and resistor values device package marking r1 (k) r2 (k) shipping ? mun5211dw1t1 sot?363 7a 10 10 3000/tape & reel mun5211dw1t1g sot?363 (pb?free) 7a 10 10 3000/tape & reel mun5212dw1t1 sot?363 7b 22 22 3000/tape & reel mun5212dw1t1g sot?363 (pb?free) 7b 22 22 3000/tape & reel mun5213dw1t1 sot?363 7c 47 47 3000/tape & reel mun5213dw1t1g sot?363 (pb?free) 7c 47 47 3000/tape & reel mun5214dw1t1 sot?363 7d 10 47 3000/tape & reel mun5214dw1t1g sot?363 (pb?free) 7d 10 47 3000/tape & reel mun5215dw1t1 sot?363 7e 10 3000/tape & reel mun5215dw1t1g sot?363 (pb?free) 7e 10 3000/tape & reel mun5216dw1t1 sot?363 7f 4.7 3000/tape & reel mun5216dw1t1g sot?363 (pb?free) 7f 4.7 3000/tape & reel mun5230dw1t1 sot?363 7g 1.0 1.0 3000/tape & reel mun5230dw1t1g sot?363 (pb?free) 7g 1.0 1.0 3000/tape & reel mun5231dw1t1 sot?363 7h 2.2 2.2 3000/tape & reel mun5231dw1t1g sot?363 (pb?free) 7h 2.2 2.2 3000/tape & reel mun5232dw1t1 sot?363 7j 4.7 4.7 3000/tape & reel mun5232dw1t1g sot?363 (pb?free) 7j 4.7 4.7 3000/tape & reel mun5233dw1t1 sot?363 7k 4.7 47 3000/tape & reel mun5233dw1t1g sot?363 (pb?free) 7k 4.7 47 3000/tape & reel mun5234dw1t1 sot?363 7l 22 47 3000/tape & reel mun5234dw1t1g sot?363 (pb?free) 7l 22 47 3000/tape & reel mun5235dw1t1 sot?363 7m 2.2 47 3000/tape & reel mun5235dw1t1g sot?363 (pb?free) 7m 2.2 47 3000/tape & reel mun5236dw1t1 sot?363 7n 100 100 3000/tape & reel mun5236dw1t1g sot?363 (pb?free) 7n 100 100 3000/tape & reel mun5237dw1t1 sot?363 7p 47 22 3000/tape & reel mun5237dw1t1g sot?363 (pb?free) 7p 47 22 3000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mun5211dw1t1 series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 ) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current mun5211dw1t1, g (v eb = 6.0 v, i c = 0) mun5212dw1t1, g mun5213dw1t1, g mun5214dw1t1, g mun5215dw1t1, g mun5216dw1t1, g mun5230dw1t1, g mun5231dw1t1, g mun5232dw1t1, g mun5233dw1t1, g mun5234dw1t1, g mun5235dw1t1, g mun5236dw1t1, g mun5237dw1t1, g i ebo ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 madc collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (note 3) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc 3. pulse test: pulse width < 300 s, duty cycle < 2.0% on characteristics (note 4) dc current gain mun5211dw1t1, g (v ce = 10 v, i c = 5.0 ma) mun5212dw1t1, g mun5213dw1t1, g mun5214dw1t1, g mun5215dw1t1, g mun5216dw1t1, g mun5230dw1t1, g mun5231dw1t1, g mun5232dw1t1, g mun5233dw1t1, g mun5234dw1t1, g mun5235dw1t1, g mun5236dw1t1, g mun5237dw1t1, g h fe 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 ? ? ? ? ? ? ? ? ? ? ? ? ? ?
mun5211dw1t1 series http://onsemi.com 4 collector-emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) mun5211dw1t1, g mun5212dw1t1, g mun5213dw1t1, g mun5214dw1t1, g mun5235dw1t1, g mun5236dw1t1, g (i c = 10 ma, i b = 5 ma) mun5230dw1t1, g mun5231dw1t1, g mun5237dw1t1, g (i c = 10 ma, i b = 1 ma) mun5215dw1t1, g mun5216dw1t1, g mun5232dw1t1, g mun5233dw1t1, g mun5234dw1t1, g v ce(sat) ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) mun5211dw1t1, g mun5212dw1t1, g mun5214dw1t1, g mun5215dw1t1, g mun5216dw1t1, g mun5230dw1t1, g mun5231dw1t1, g mun5232dw1t1, g mun5233dw1t1, g mun5234dw1t1, g mun5235dw1t1, g (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) mun5213dw1t1, g (v cc = 5.0 v, v b = 5.5 v, r l = 1.0 k ) mun5236dw1t1, g (v cc = 5.0 v, v b = 4.0 v, r l = 1.0 k ) mun5237dw1t1, g v ol ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc 4. pulse test: pulse width < 300 s, duty cycle < 2.0%
mun5211dw1t1 series http://onsemi.com 5 electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 ) (continued) characteristic symbol min typ max unit on characteristics (note 5) (continued) output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) mun5211dw1t1, g mun5212dw1t1, g mun5213dw1t1, g mun5214dw1t1, g mun5233dw1t1, g mun5234dw1t1, g mun5235dw1t1, g (v cc = 5.0 v, v b = 0.050 v, r l = 1.0 k ) mun5230dw1t1, g (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) mun5215dw1t1, g mun5216dw1t1, g mun5231dw1t1, g mun5232dw1t1, g mun5236dw1t1, g mun5237dw1t1, g v oh 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? vdc input resistor mun5211dw1t1, g mun5212dw1t1, g mun5213dw1t1, g mun5214dw1t1, g mun5215dw1t1, g mun5216dw1t1, g mun5230dw1t1, g mun5231dw1t1, g mun5232dw1t1, g mun5233dw1t1, g mun5234dw1t1, g mun5235dw1t1, g mun5236dw1t1, g mun5237dw1t1, g r1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k resistor ratio mun5211dw1t1, g/mun5212dw1t1, g/ mun5213dw1t1, g/mun5236dw1t1, g mun5214dw1t1, g mun5215dw1t1, g/mun5216dw1t1, g mun5230dw1t1, g/mun5231dw1t1, g/mun5232dw1t1, g mun5233dw1t1, g mun5234dw1t1, g mun5235dw1t1, g mun5237dw1t1, g r1/r2 0.8 0.17 ? 0.8 0.055 0.38 0.038 1.7 1.0 0.21 ? 1.0 0.1 0.47 0.047 2.1 1.2 0.25 ? 1.2 0.185 0.56 0.056 2.6 5. pulse test: pulse width < 300 s, duty cycle < 2.0% figure 1. derating curve 300 200 150 100 50 0 ?50 0 50 100 150 t a , ambient temperature ( c) r ja = 833 c/w 250 p d , power dissipation (mw) all mun5211dw1t1 series devices
mun5211dw1t1 series http://onsemi.com 6 typical electrical characteristics ? mun5211dw1t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 2. v ce(sat) versus i c 10 02030 i c , collector current (ma) 10 1 0.1 t a =?25 c 75 c 25 c 40 50 figure 3. dc current gain figure 4. output capacitance 1 0.1 0.01 0.001 020 40 50 i c , collector current (ma) 1000 100 10 1 10 100 i c , collector current (ma) t a =75 c 25 c ?25 c t a =?25 c 25 c figure 5. output current versus input voltage 75 c 25 c t a =?25 c 100 10 1 0.1 0.01 0.001 01 234 v in , input voltage (volts) 56 78 910 figure 6. input voltage versus output current 50 010203040 4 3 1 2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 75 c v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce(sat) , collector voltage (volts)
mun5211dw1t1 series http://onsemi.com 7 typical electrical characteristics ? mun5212dw1t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 7. v ce(sat) versus i c figure 8. dc current gain figure 9. output capacitance figure 10. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c ?25 c 100 10 1 100 75 c 25 c 100 0 v in , input voltage (volts) 10 1 0.1 0.01 0.001 246810 t a =?25 c 0 i c , collector current (ma) 100 t a =?25 c 75 c 10 1 0.1 10 20 30 40 50 25 c figure 11. input voltage versus output current 0.001 t a =?25 c 75 c 25 c 0.01 0.1 1 40 i c , collector current (ma) 0 20 50 50 0 10 203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) i c /i b = 10 v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v v ce(sat) , collector voltage (volts)
mun5211dw1t1 series http://onsemi.com 8 typical electrical characteristics ? mun5213dw1t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 12. v ce(sat) versus i c 0246810 100 10 1 0.1 0.01 0.001 v in , input voltage (volts) t a =?25 c 75 c 25 c figure 13. dc current gain figure 14. output capacitance 100 10 1 0.1 010 20 3040 50 i c , collector current (ma) figure 15. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c ?25 c 100 10 1 100 25 c 75 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) figure 16. input voltage versus output current 0 20 40 50 10 1 0.1 0.01 i c , collector current (ma) 25 c 75 c v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 t a =?25 c t a =?25 c v ce(sat) , collector voltage (volts)
mun5211dw1t1 series http://onsemi.com 9 typical electrical characteristics ? mun5214dw1t1 10 1 0.1 01020304050 100 10 1 0246810 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 1520 2530 3540 4550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 17. v ce(sat) versus i c i c , collector current (ma) 020406080 figure 18. dc current gain 1 10 100 i c , collector current (ma) figure 19. output capacitance figure 20. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 21. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 ?25 c 25 c t a =75 c v ce = 10 300 250 200 150 100 50 0 2468 1520405060708090 f = 1 mhz l e = 0 v t a = 25 c 25 c i c /i b = 10 t a =?25 c t a =75 c 25 c ?25 c v o = 0.2 v t a =?25 c 75 c v o = 5 v 25 c 75 c v ce(sat) , collector voltage (volts)
mun5211dw1t1 series http://onsemi.com 10 typical electrical characteristics ? mun5215dw1t1 75 c 25 c ?25 c figure 22. v ce(sat) versus i c figure 23. dc current gain figure 24. output capacitance figure 25. output current versus input voltage v in , input voltage (volts) figure 26. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 10 0 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 1 0 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 0.01 0.1 30 v r , reverse bias voltage (volts) 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 35 25 15 5 3.5 3 2.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
mun5211dw1t1 series http://onsemi.com 11 typical electrical characteristics ? mun5216dw1t1 75 c 25 c ?25 c figure 27. v ce(sat) versus i c figure 28. dc current gain figure 29. output capacitance figure 30. output current versus input voltage v in , input voltage (volts) figure 31. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 10 0 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 1 0 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 0.01 0.1 30 v r , reverse bias voltage (volts) 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 35 25 15 5 3.5 3 2.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
mun5211dw1t1 series http://onsemi.com 12 typical electrical characteristics ? mun5230dw1t1 75 c 25 c ?25 c figure 32. v ce(sat) versus i c figure 33. dc current gain figure 34. output capacitance figure 35. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 36. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 10 0 10 1 100 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 1 0 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
mun5211dw1t1 series http://onsemi.com 13 typical electrical characteristics ? mun5231dw1t1 75 c 25 c ?25 c figure 37. v ce(sat) versus i c figure 38. dc current gain figure 39. output capacitance figure 40. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 41. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 10 0 10 1 100 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 1 0 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
mun5211dw1t1 series http://onsemi.com 14 typical electrical characteristics ? mun5232dw1t1 75 c 25 c ?25 c figure 42. v ce(sat) versus i c figure 43. dc current gain figure 44. output capacitance figure 45. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 46. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 10 0 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 1 0 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 3 100 5 6 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
mun5211dw1t1 series http://onsemi.com 15 typical electrical characteristics ? mun5233dw1t1 75 c 25 c ?25 c figure 47. v ce(sat) versus i c figure 48. dc current gain figure 49. output capacitance figure 50. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 51. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 30 25 15 10 0 i c , collector current (ma) 10 0 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 1 0 9 8 7 10 15 10 5 0 0.1 1 20 25 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 20 3.5 3 2.5 100 5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
mun5211dw1t1 series http://onsemi.com 16 typical electrical characteristics ? mun5234dw1t1 75 c 25 c ?25 c figure 52. v ce(sat) versus i c figure 53. dc current gain figure 54. output capacitance figure 55. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 56. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 30 25 15 10 0 i c , collector current (ma) 10 0 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain c ob , capacitance (pf) i c , collector current (ma) v in , input voltage (volts) 75 c 25 c t a = ?25 c 0.01 20 100 tbd tbd tbd 5 i c /i b = 10 v ce = 10 v
mun5211dw1t1 series http://onsemi.com 17 typical electrical characteristics ? mun5235dw1t1 75 c 25 c ?25 c figure 57. v ce(sat) versus i c figure 58. dc current gain figure 59. output capacitance figure 60. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 61. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 10 0 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 1 0 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 100 4.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
mun5211dw1t1 series http://onsemi.com 18 typical electrical characteristics ? mun5236dw1t1 75 c 25 c ?25 c figure 62. v ce(sat) versus i c figure 63. dc current gain figure 64. output capacitance figure 65. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 66. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 10 0 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 1 0 9 8 7 100 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 100 4.5 5 10 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
mun5211dw1t1 series http://onsemi.com 19 typical electrical characteristics ? mun5237dw1t1 75 c 25 c ?25 c figure 67. v ce(sat) versus i c figure 68. dc current gain figure 69. output capacitance figure 70. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 71. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 10 0 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 1 0 9 8 7 100 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 100 4.5 5 10 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
mun5211dw1t1 series http://onsemi.com 20 package dimensions sc?88 (sot?363 ) case 419b?02 issue v style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b?01 obsolete, new standard 419b?02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ?e? b 6 pl dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086
mun5211dw1t1 series http://onsemi.com 21 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 mun5211dw1t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.

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